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PNP EPITAXIAL
TIP115/116/117 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN TO-220
MIN hFE=1000 @ VCE= -4V, IC= -1A
LOW COLLECTOR-EMITTER
SATURATION VOLTAGE
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUSTRIAL USE
Complementary to TIP110/111/112
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage :TIP115 VCBO -60 V
1.Base 2.Collector 3.Emitter
: TIP116 -80 V
: TIP117 -100 V
Collector Emitter Voltage
:TIP115 VCEO -60 V
:TIP116 -80 V
:TIP117 -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -2 A
Collector Current (Pulse) IC -4 A
Base Current (DC) IB -50 ~
Collector Dissipation ( T A=5 ) PC 2 W
Collector Dissipation ( T C=5 ) PC 50 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (T C =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus) IC = -30mA, IB = 0
: TIP115 -60 V
: TIP116 -80 V
: TIP117 -100 V
Collector Cutoff Current : TIP115 ICEO VCE = -30V, IB = 0 -2 mA
: TIP116 VCE = -40V, IB = 0 -2 mA
: TIP117 VCE = -50V, IB = 0 -2 mA
Collector Cutoff Current : TIP115 ICBO VCB = -60V, IE = 0 -1 mA
: TIP116 VCB = -80V, IE = 0 -1 mA
: TIP117 VCB = -100V, IE = 0 -1 mA
Emitter Cutoff Current IEBO VBE = -5V, IC = 0 -2 mA
DC Current Gain hFE VCE = -4V,IC = -1A 1000
VCE = -4V, IC = -2A 500
Collector Emitter Saturation Voltage VCE(sat) IC = -2A, IB = -8mA -2.5 V
Base Emitter On Voltage VBE(on) VCE = -4V, IC = -2A -2.8 V
Output Capacitance COB VCB = -10V, IE = 0, f = 0.1MHz 200 pF
PNP EPITAXIAL
TIP115/116/117 SILICON DARLINGTON TRANSISTOR
NPN EPITAXIAL
TIP115/116/117 SILICON DARLINGTON TRANSISTOR