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S9015(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
High total power dissipation.(PC=0.45W)
High hFE and good linearity
Complementary to S9014
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 0.45 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.05 A
DC current gain hFE VCE=-5V, IC= -1mA 60 1000
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V
VCE=-5V, IC= -10mA
Transition frequency fT 100 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank A B C D
Range 60-150 100-300 200-600 400-1000
S9015(PNP)
TO-92 Bipolar Transistors
Typical Characteristics