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2SC2412
SOT-23 Transistor(NPN)
1. BASE SOT-23
2. EMITTER
3. COLLECTOR
Features
Low Cob ,Cob = 2.0 pF (Typ).
MARKING : BQ, BR, BS
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A
DC current gain hFE VCE=6V,IC=1mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V
Transition frequency fT VCE=12V,IC=-2mA,f=100MHz 160 MHz
Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 2.0 3.5 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 120 - 270 180 - 390 270 - 560
Marking BQ BR BS
2SC2412
SOT-23 Transistor(NPN)
Typical Characteristics
2SC2412
SOT-23 Transistor(NPN)