Text preview for : AO4411.pdf part of Various AO4411 . Electronic Components Datasheets Various AO4411.pdf
Back to : AO4411.pdf | Home
AO4411
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4411 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON), and ultra-low low gate ID = -8 A (VGS = -10V)
charge. This device is suitable for use as a load RDS(ON) < 32m (VGS = -10V)
switch or in PWM applications. Standard Product RDS(ON) < 55m (VGS = -4.5V)
AO4411 is Pb-free (meets ROHS & Sony 259
specifications). AO4411L is a Green Product
ordering option. AO4411 and AO4411L are
electrically identical.
D
SOIC-8
Top View
S D
S D
S D G
G D S
Absolute Maximum Ratings TA=25