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Philips Semiconductors Product specification

PowerMOS transistor BUK475-60H
Isolated version of BUK455-60H

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The device VDS Drain-source voltage 60 V
is intended for use in Automotive ID Drain current (DC) 22.5 A
applications, Switched Mode Power Ptot Total power dissipation 30 W
Supplies (SMPS), motor control, Tj Junction temperature 150