ceu02n7g-1_ced02n7g-1.pdf part of CET ceu02n7g-1 ced02n7g-1 ceu02n7g-1_ced02n7g-1.pdf, . Electronic Components Datasheets Active components Transistors CET ceu02n7g-1

Text preview for : ceu02n7g-1_ced02n7g-1.pdf part of CET ceu02n7g-1 ced02n7g-1 . Electronic Components Datasheets Active components Transistors CET ceu02n7g-1_ced02n7g-1.pdf

Back to : ceu02n7g-1_ced02n7g-1.pdf | Home

CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V.
750V@Tc=150 C
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D
Lead free product is acquired.

TO-251 & TO-252 package.

D G

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
720 (Tc=25 C) V
Drain-Source Voltage VDS
750 (Tc=150 C) V
Gate-Source Voltage VGS