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SEMICONDUCTOR KTC8050
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


HIGH CURRENT APPLICATION.

FEATURE B C

Complementary to KTC8550.




A
N DIM MILLIMETERS
E A 4.70 MAX
K
MAXIMUM RATING (Ta=25 ) G B 4.80 MAX
D C 3.70 MAX
CHARACTERISTIC SYMBOL RATING UNIT




J
D 0.45
E 1.00
VCBO F 1.27
Collector-Base Voltage 35 V
G 0.85
H 0.45
Collector-Emitter Voltage VCEO 30 V H J _
14.00 + 0.50
F F K 0.55 MAX
Emitter-Base Voltage VEBO 5 V L 2.30
M 0.45 MAX
Collector Current IC 800 mA N 1.00




C
1 2 3




L




M
Emitter Current IE -800 mA
1. EMITTER
Collector Power Dissipation PC 625 mW 2. BASE
3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TO-92




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.5mA, IE=0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 30 - - V
hFE(1) (Note) VCE=1V, IC=50mA 100 - 300
DC Current Gain
hFE(2) VCE=1V, IC=350mA 60 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 13 - pF
Note : hFE(1) Classification C : 100 200, D : 150 300




1999. 11. 30 Revision No : 3 1/2
KTC8050


I C - V CE h FE - I C
1k 1k
COLLECTOR CURRENT I C (mA)




COMMON EMITTER COMMON EMITTER
Ta=25 C 8 500 VCE =1V
800




DC CURRENT GAIN h FE
7 300
6 Ta=100 C
600 5
4 Ta=25 C
100
3
400 Ta=-25 C
2 50
30
200 I B =1mA

0
0 10
0 1 2 3 4 5 6 1 3 10 30 100 300 1k 2k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)




VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION




1 1k
COLLECTOR CURRENT I C (mA)




COMMON EMITTER COMMON EMITTER
I C /I B =25 500 VCE =1V
0.5
VOLTAGE VCE(sat) (V)




300
0.3
C
100
00
=1 50
Ta
C




5 C
C
0.1 25 C 30 100


Ta=25

Ta=-2
Ta=-25 C -25 C
Ta=


0.05 10
0.03 Ta=25 C 5
Ta=100 C
3

0.01 1
1 3 10 30 100 300 1k 0 0.2 0.4 0.6 0.8 1.0 1.2

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)




Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW)




700

600

500

400

300

200

100

0
0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE Ta ( C)



1999. 11. 30 Revision No : 3 2/2