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2SC4097
SOT-323 Transistor(NPN)
1. BASE
SOT-323
2. EMITTER
Features 3. COLLECTOR
High ICMax. ICMax=0.5A
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1577
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 1 A
Emitter cut-off current IEBO VEB=4V,IC=0 1 A
DC current gain hFE VCE=3V,IC=10mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.4 V
Transition frequency fT VCE=5V, IC=20mA,f =100MHz 250 MHz
Collector Output Capacitance Cob VCB=10V,IE=0,f=1MHZ 6 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
MARKING CP CQ CR
2SC4097
SOT-323 Transistor(NPN)
Typical Characteristics