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IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
TM
"%&$!"# 2 Power-Transistor
Product Summary
Features
V ;I 0- K
R ( 492 ??6= ?@ C == 6=
>2 6G
R - @ ?>2 I.) 0&* Z"
R I46=6?E E 492 C IR ;I"\[# AC 5F4E ) '
= 82 6 86 @ !
I; 1- 7
R/ 6C = H @ ?C :D 2 ?46 R ;I"\[#
J@ 6D E
R U @ A6C E E
2 :?8 6>A6C E 6
2 FC
R * 3 766 = 5 A= E , @ # - 4@ >A= ?E
C 62 2 :?8 :2
)#
:7 5:?8 E %
R + F2 = :65 2 44@ C @ 7 C 2 C 2 AA= E ?
@ E 86E :42 :@
R$562 =7 C C H:E
@ 9:8976BF6?4J D 49:?8 2 ?5 DJ?49C ?@ FD C :7 E ?
@ 64E:42 :@
R# 2 = 86?766 2 44@ C
@ C 5:?8 E $
@
Type $* ( ( " $* $ ( ( " $* * ( ( "
Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+
Marking (09D<0D (09D<0D (09D<0D
Maximum ratings, 2 E W U F?= D @ E H:D D
T 6D 96C 6 A64:7:65
Parameter Symbol Conditions Value Unit
@ ?E FD 5C :? 4FC6?E
:?F@ 2 C I; T 9 U 1- 7
T 9 U .0
C *#
* F= 65 5C :? 4FC6?E
D 2 I ;$]bY`R T 9 U +0(
8J :?8= D
G = ?496 6?6C D 6 AF= 6
2 2 E 7I I ; R >I " *.* ZA
I ; V ;I /
6C6
, 6G D 5:@ 56 5v 'Qt Qv 'Qt Qi 'Qt W D . XK's`
T W$ZNe U
" 2 E D FC G =2 86+#
6 @ 46 @ E V >I r*( K
* @ H6C D E ?
5:D :A2 :@ P a\a T 9 U )./ L
) A6C E 2 ?5 D @ C 86 E
2 :?8 E2 6>A6C E 6
2 FC T W T `aT
U
$ 4= E 42 E C $( $
:>2 :4 68@ J
, 6G
A2 86
IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
.96C =C :D 2 ?46 ; :@ ? 42 D
>2 6D E F?4E 6 R aUA9 % % (&1 B'L
.96C =C :D 2 ?46 ; :@ ?
>2 6D E F?4E R aUA7 @ AC
>:?:>2 =7 @ E :?E
2 >3 :6?E .) .)
.) ,#
4> 4@ @ = 2 C
:?8 62 % % ,(
Electrical characteristics, 2 E W U F?= D @ E H:D D
T 6D 96C 6 A64:7:65
Static characteristics
C :?D FC 3 C <5@ H? G =2 86
2 @ 46 62 @ E V "8H#;II V >I / I ; > 0- % % K
6 9C 9@ 5 @ E
" 2 E E 6D = G =2 86 V >I"aU# V ;I5V >I I ; W * + ,
V ;I / V >I /
16C 82 E G =2 86 5C :? 4FC6?E
@ 6 @ E 2 C I ;II % (&) ) s7
T W U
V ;I / V >I /
% )( )((
T W U
" 2 E @ FC = <2 86 4FC6?E
6D 46 62 C I >II V >I / V ;I / % ) )(( [7
V >I / I ;
C :?D FC @ ?D 2 E C :D 2 ?46
2 @ 46 E 6 6D E R ;I"\[# % .&) 0&* Z"
"JE*.+#
V >I / I ;
% .&,
.) .)
" 2 E C :D 2 ?46
6 6D E R> % )&- % "
hV ;Ih6*hI ;hR ;I"\[#ZNe
J_N[`P\[QbPaN[PR g S` -/ ))+ % I
I ;
)#
% - . 2 ?5 % -
*#
- 66 7 6
:8FC
+#
. WZNe U 2 ?5 5FE 4J4=
7 C T`4%-K
J 6 @ /
,#
6G @ ? >> I >> I
>> 6A@ IJ * ! H:E 4>* @ ?6 = J6C W > E
:46 , 9 2 9:4< 4@ AA6C C 7 C 2 :?
2 62 @ 5C
4@ ??64E ?
* :D G E =:? D := 2 :C
:@ 6C:42 E=
, 6G
A2 86
IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
$?AFE A2 4:E ?46
42 2 C V`` % -(+( ..1( ]=
V >I / V ;I /
AFE
) FE 42 A2 4:E ?46
2 C \`` % 1,* )*-(
f ' # K
6C6 C 7 42
, 6G D E2 ?D 6C A2 4:E ?46
2 C _`` % .- 10
.FC ? 56= J E
?@ 2 :>6 t Q"\[# % )- *+ [`
, :D E
6 :>6 t_ V ;; / V >I / % *, +.
?@ 7 2 :>6
.FC 7 56= J E t Q"\SS# I ;
R >
" % *. +1
! =E
2 = :>6 tS % . )(
" 2 E 92 C 92 C 4E :D :4D-#
6 T6 2 6C E
" 2 E E D FC 492 C
6 @ @ 46 86 Q T` % *0 +/ [9
6 @ 2
" 2 E E 5C :? 492 C
86 Q TQ % )/ *.
V ;; / I ;
- H:E
49:?8 492 C
86 Q `d % +( ,+
V >I E /
@
6
" 2 E 492 C E E =
86 @ 2 QT % /- 11
" 2 E A= E F G =2 86
6 2 62 @ E V ]YNaRNb % -&- % K
) FE 492 C
AFE 86 Q \`` V ;; / V >I / % /* 1- [9
Reverse Diode
:@ 56 4@ ?E FD 7 C C 4FC6?E
:?@ @ H2 5 C II % % 1- 7
T 9 U
D
:@ 56 AF= 6 4FC6?E
C I I$]bY`R % % +0(
V >I / I =
:@ 56 7 C C G =2 86
@ H2 5 @ E V I; % ) )&* K
T W U
, 6G D C G J E
6C6 64@ 6C :>6 t __ V H / I =5I I % )(- [`
Q __ Qi ='Qt W D
6C6 64@ 6C 86
, 6G D C G J 492 C % *.- % [9
-#
- 66 7 6 7 C E 492 C A2 C >6E 567 :@ ?
:8FC @ 82 6 86 2 6C :?:E
, 6G
A2 86
IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
1 Power dissipation 2 Drain current
P a\a5S"T 9# I ;5S"T 9 V >I" /
200 100
160 80
120 60
P tot [W]
I D [A]
80 40
40 20
0 0
0 50 100 150 200 0 50 100 150 200
T C [