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BU911
MEDIUM VOLTAGE NPN IGNITION DARLINGTON
s SGS-THOMSON PREFERRED SALESTYPE
s NPN DARLINGTON
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s SOLENOID / RELAY DRIVERS
s MOTOR CONTROL 3
s ELECTRONIC AUTOMOTIVE IGNITION
2
1
DESCRIPTION
The BU911 is an NPN transistor in monolithic TO-220
Darlington configuration Jedec TO-220 plastic
package, designed for applications such as
electronic ignition, DC and AC motor controls,
solenoid drivers, etc.
INTERNAL SCHEMATIC DIAGRAM
R 1 = 1.7 k R 2 = 50
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 450 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 6 A
I CM Collector Peak Current 10 A
IB Base Current 1 A
P tot Total Dissipation at T c 25 o C 60 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
BU911
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.08 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off Current V CE =450 V 1 mA
o
(V BE = 0) V CE =450 V T case = 125 C 5 mA
I CEO Collector Cut-off Current 1 mA
V CE = 400 V
(I B = 0)
I EBO Emitter Cut-off 5 mA
V EB = 5 V
Current (I C = 0)
V CEO(sus) Collector-emitter 400 V
I = 100 mA
Sustaining Voltage (I B = 0) C
V CE(sat) Collector-emitter I C = 2.5 A IB = 50 mA 1.8 V
Saturation Voltage IC = 4 A I B = 200 mA 1.8 V
V BE(sat) Base-emitter Saturation I C = 2.5 A I B = 50 mA 2.2 V
Voltage IC = 4 A I B = 200 mA 2.5 V
VF Diode Forward Voltage IF = 4 A 2.5 V
Pulsed: Pulse duration = 300