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BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s FAST SWITCHING SPEED
APPLICATIONS:
s POWER SUPPLIES
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
2
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN TO-3
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 900 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 6 A
I CM Collector Peak Current 8 A
IB Base Current 3 A
P tot Total Power Dissipation at T case 25 o C 75 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
June 1997 1/4
BU326A
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.33 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off Current V CE = 900 V 1 mA
o
(V BE = 0) V CE = 900 V T c = 125 C 2 mA
I EBO Emitter Cut-off Current V EB = 10 V 10 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 400 V
Sustaining Voltage(I B = 0)
V CE(sat) Collector-Emitter I C = 2.5 A I B = 0.5 A 1.5 V
Saturation Voltage IC = 4 A IB = 1.25 A 3 V
V BE(sat) Base-Emitter Saturation I C = 2.5 A I B = 0.5 A 1.4 V
Voltage IC = 4 A I B = 1.25 A 1.6
h FE DC Current Gain IC = 1 A V CE = 5 V 25
t on Turn-on Time I C = 2.5 A I B1 = 0.5 A 0.5