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STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZETM POWER MOSFET
TARGET DATA
TYPE V DSS R DS(on) ID
STP16NE06L 60 V < 0.12 16 A
STP16NE06LFP 60 V < 0.12 11 A
s TYPICAL RDS(on) = 0.09
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
3 3
s)
s APPLICATION ORIENTED 2 2
1 1
t(
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
TO-220
d uc
TO-220FP
ro
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor P
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
le te
INTERNAL SCHEMATIC DIAGRAM
so
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
DC MOTOR CONTROL
- Ob
(s)
s
s DC-DC & DC-AC CONVERTERS
ct
s SYNCHRONOUS RECTIFICATION
du
ABSOLUTE MAXIMUM RATINGS
o
Pr
Symbol Parameter Value Unit
STP16NE06L STP16NE06LFP
e
let
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS
o Gate-source Voltage