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MMBTA05
TRANSISTOR(NPN)
SOT-23
FEATURES
Driver transistor 1. BASE
2. EMITTER
3. COLLECTOR
MARKING :1H
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 300 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICEO VCE=60V, IB=0 0.1 A
Collector cut-off current IEBO VEB=3V, IC=0 0.1 A
hFE1 VCE=1V, IC= 10mA 100 400
DC current gain
hFE2 VCE=1V, IC= 100mA 100
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V
Base-emitter voltage VBE VCE=1V, IC= 100mA 1.2 V
VCE= 2V, IC=10mA
Transition frequency fT 100 MHz
f=100MHz
1
JinYu www.htsemi.com
semiconductor
Date:201/5
MMBTA05
2
JinYu www.htsemi.com
semiconductor
Date:201/5