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TECHNICAL DATA

PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315

Devices Qualified Level
JAN
2N2880 2N3749 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 110 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 0.5 Adc
Collector Current IC 5.0 Adc
Total Power Dissipation @ TA = 250C (1) 2.0
PT W
@ TC = 1000C (2) 30
Operating & Storage Junction Temperature Range 0
Top, Tstg -65 to +200 C TO-59*
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case 0
RJC 3.33 C/W
1) Derate linearly 11.4 mW/0C for TA > 250C
2) Derate linearly 300 mW/0C for TC > 1000C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 80 Vdc
IC = 100 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CBO 110 Vdc
IC = 10