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KTA1281
TO-92MOD Transistor (PNP)
TO-92MOD
1. EMITTER 5.800
1 6.200
2 2. COLLECTOR
3
3. BASE 8.400
8.800
0.900
Features
1.100
0.400
0.600
Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) 13.800
14.200
High Speed Switching time: tstg=1.0 S(Typ.).
Complementary to KTC3209.
1.500 TYP
2.900
3.100
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600
0.380
Symbol Parameter Value Units
0.400 4.700
0.500 5.100
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V 1.730
4.000 2.030
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100 uA, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -50 V , IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A
hFE(1) VCE= -2V, IC= -0.5A 70 240
DC current gain
hFE(2) VCE= -2V, IC= -1.5A 40
Collector-emitter saturation voltage VCE(sat) IC=-1A, IB= -0.05A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-1A, IB= -0.05A -1.2 V
Transition frequency fT VCE=-2V, IC=-0.5A 100 MHz
Out capacitance Cob VCB= -10 V , IE=0 , f=1MHZ 40 pF
Turn-on time ton 0.1 us
VCC=-30V,IB1=-IB2=-0.05A,
Storage time ts 1 us
IC=-1A
Fall time tf 0.1 us
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120 - 240
KTA1281
TO-92MOD Transistor (PNP)
Typical Characteristics
KTA1281
TO-92MOD Transistor (PNP)