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S901 4
TRANSISTOR (NPN) SOT-23
1. BASE
FEATURES
2. EMITTER
Complementary to S9015 3. COLLECTOR
MARKING: J6
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=50 V , IE=0 0.1 A
Collector cut-off current ICEO VCE=35V , IB=0 0.1 A
Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 A
DC current gain hFE VCE=5V, IC= 1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V
VCE=5V, IC= 10mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE
Rank L H
Range 200-450 450-1000
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
S901 4
2
JinYu www.htsemi.com
semiconductor
Date:201/5