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DATA SHEET
For a complete data sheet, please also download:
· The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC · The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC

HEF4060B MSI 14-stage ripple-carry binary counter/divider and oscillator
Product specification File under Integrated Circuits, IC04 January 1995

Philips Semiconductors

Product specification

14-stage ripple-carry binary counter/divider and oscillator
DESCRIPTION The HEF4060B is a 14-stage ripple-carry binary counter/divider and oscillator with three oscillator terminals (RS, RTC and CTC), ten buffered outputs (O3 to O9 and O11 to O13) and an overriding asynchronous master reset input (MR). The oscillator configuration allows design of either RC or crystal oscillator circuits. The oscillator may

HEF4060B MSI
be replaced by an external clock signal at input RS. The counter advances on the negative-going transition of RS. A HIGH level on MR resets the counter (O3 to O9 and O11 to O13 = LOW), independent of other input conditions. Schmitt-trigger action in the clock input makes the circuit highly tolerant to slower clock rise and fall times.

Fig.1 Functional diagram.

PINNING MR RS RTC CTC O3 to O9 O11 to O13 master reset clock input/oscillator pin oscillator pin external capacitor connection counter outputs

HEF4060BP(N): HEF4060BD(F): Fig.2 Pinning diagram. HEF4060BT(D):

16-lead DIL; plastic (SOT38-1) 16-lead DIL; ceramic (cerdip) (SOT74) 16-lead SO; plastic (SOT109-1)

( ): Package Designator North America FAMILY DATA, IDD LIMITS category MSI See Family Specifications

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14-stage ripple-carry binary counter/divider and oscillator HEF4060B MSI

Philips Semiconductors

Product specification

14-stage ripple-carry binary counter/divider and oscillator
AC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns VDD V Propagation delays RS O3 HIGH to LOW 5 10 15 5 LOW to HIGH On On + 1 HIGH to LOW 10 15 5 10 15 5 LOW to HIGH MR On HIGH to LOW Output transition times HIGH to LOW LOW to HIGH Minimum clock pulse width input RS HIGH Minimum MR pulse width; HIGH Recovery time for MR Maximum clock pulse frequency input RS 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 fmax tRMR tWMRH tWRSH 120 50 30 50 30 20 160 80 60 4 10 15 tTLH tTHL tPHL tPLH tPHL tPLH tPHL 210 80 50 210 80 50 25 10 6 25 10 6 100 40 30 60 30 20 60 30 20 60 25 15 25 15 10 80 40 30 8 20 30 420 160 100 420 160 100 50 20 12 50 20 12 200 80 60 120 60 40 120 60 40 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MHz MHz MHz SYMBOL MIN. TYP. MAX.

HEF4060B MSI

TYPICAL EXTRAPOLATION FORMULA 183 ns + (0,55 ns/pF) CL 69 ns + (0,23 ns/pF) CL 42 ns + (0,16 ns/pF) CL 183 ns + (0,55 ns/pF) CL 69 ns + (0,23 ns/pF) CL 42 ns + (0,16 ns/pF) CL

73 ns + (0,55 ns/pF) CL 29 ns + (0,23 ns/pF) CL 22 ns + (0,16 ns/pF) CL 10 ns + (1,0 ns/pF) CL 9 ns + (0,42 ns/pF) CL 6 ns + (0,28 ns/pF) CL 10 ns + (1,0 ns/pF) CL 9 ns + (0,42 ns/pF) CL 6 ns + (0,28 ns/pF) CL

January 1995

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Philips Semiconductors

Product specification

14-stage ripple-carry binary counter/divider and oscillator
AC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C; input transition times 20 ns VDD V Dynamic power dissipation per package (P) Total power dissipation when using the on-chip oscillator (P) Notes 1. where: fi = input frequency (MHz) fo = output frequency (MHz) CL = load capacitance (pF) VDD = supply voltage (V) Ct = timing capacitance (pF) fosc = oscillator frequency (MHz) RC oscillator 5 10 15 5 10 15 700 fi 3 300 fi 8 900 fi + + +

HEF4060B MSI

TYPICAL FORMULA FOR P (µW)(1) foCLVDD2 foCLVDD2 foCLVDD2 690 VDD 6 900 VDD foCLVDD2 foCLVDD2 + + 2CtVDD2fosc 2CtVDD2fosc +

700 fosc + foCLVDD2 + 2CtVDD2fosc + 3 300 fosc + 8 900 fosc +

+ 22 000 VDD

Typical formula for oscillator frequency: 1 f osc = -------------------------------2,3 × R t × C t

Fig.4 External component connection for RC oscillator.

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Philips Semiconductors

Product specification

14-stage ripple-carry binary counter/divider and oscillator
Timing component limitations The oscillator frequency is mainly determined by RtCt, provided Rt << R2 and R2C2 << RtCt. The function of R2 is to minimize the influence of the forward voltage across the input protection diodes on the frequency. The stray capacitance C2 should be kept as small as possible. In consideration of accuracy, Ct must be larger than the inherent stray capacitance. Rt must be larger than the LOCMOS `ON' resistance in series with it, which typically is 500 at VDD = 5 V, 300 at VDD = 10 V and 200 at VDD = 15 V. The recommended values for these components to maintain agreement with the typical oscillation formula are: Ct 100 pF, up to any practical value, 10 k Rt 1 M. Typical crystal oscillator circuit In Fig.5, R2 is the power limiting resistor. For starting and maintaining oscillation a minimum transconductance is necessary. Fig.5

HEF4060B MSI

External component connection for crystal oscillator.

Fig.6

Test set-up for measuring forward transconductance gfs = dio/dvi at vo is constant (see also graph Fig.7); MR = LOW.

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Philips Semiconductors

Product specification

14-stage ripple-carry binary counter/divider and oscillator

HEF4060B MSI

A: average B: average + 2 s, C: average - 2 s, where `s' is the observed standard deviation.

Ct curve at Rt = 100 k; R2 = 470 k. Rt curve at Ct = 1 nF; R2 = 5 Rt.

Fig.7

Typical forward transconductance gfs as a function of the supply voltage at Tamb = 25 °C.

Fig.8

RC oscillator frequency as a function of Rt and Ct at VDD = 5 to 15 V; Tamb = 25 °C.

___ Rt = 100 k; Ct = 1 nF; R2 = 0. - - - Rt = 100 k; Ct = 1 nF; R2 = 300 k.

Fig.9

Oscillator frequency deviation (fosc) as a function of ambient temperature; referenced at: fosc at Tamb = 25 °C and VDD = 10 V.

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