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CEM8809
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 16A, RDS(ON) = 6 m @VGS = 10V.
RDS(ON) = 7.5 m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D D D D
Lead free product is acquired.
8 7 6 5
Surface mount Package.
SO-8
1 2 3 4
1 S S S G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS