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SEMICONDUCTOR KTA1572
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP. B D
Higher Efficiency Leading to Less Heat Generation.
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
A
C 0.60 MAX
P D 2.50 MAX
MAXIMUM RATING (Ta=25 ) DEPTH:0.2
E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT C F 1.27
S G 1.70 MAX
G
Collector-Base Voltage VCBO -120 V Q H 0.55 MAX
K J _
14.00 + 0.50
J
Collector-Emitter Voltage VCEO -100 V K 0.35 MIN
R
L _
0.75 + 0.10
F F
Emitter-Base Voltage VEBO -5 V M 4
N 25
DC IC -1 H H H O 1.25
Collector Current A P 1.50
ICP M E M
Pulse -3 Q 0.10 MAX
R _
12.50 + 0.50
Base Current IB -300 mA
D
1 2 3 L S 1.00
H
O
Collector Power Dissipation PC 1 W N N
1. EMITTER
Junction Temperature Tj 150 2. COLLECTOR
3. BASE
Storage Temperature Range Tstg -55 150
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A -120 - - V
Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=-1mA -100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A -5 - - V
Collector Cut-Off Current ICBO VCB=-80V, IE=0A - - -100 nA
Emitter Cut-Off Current IEBO VEB=-4V, IC=0A - - -100 nA
Collector-Emitter Cut-Off Current ICES VCES=-80V, VBE=0V - - -100 nA
VCE(sat) (1) IC=-250mA, IB=-25mA - - -0.12
Collector-Emitter Saturation Voltage ** VCE(sat) (2) IC=-500mA, IB=-50mA - - -0.18 V
VCE(sat) (3) IC=-1A, IB=-100mA - - -0.32
Base-Emitter Saturation Voltage ** VBE(sat) IC=-1A, IB=-100mA - - -1.1 V
Base-Emitter Voltag VBE VCE=-5V, IC=-1A - - -1.0 V
hFE(1) VCE=-5V, IC=-1mA 150 - -
hFE(2) VCE=-5V, IC=-250mA 150 - -
DC Current Gain **
hFE(3) VCE=-5V, IC=-500mA 150 - 450
hFE(4) VCE=-5V, IC=-1A 125 - -
Transition Frequency fT VCE=-10V, IC=-50mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 17 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
2010. 6. 4 Revision No : 0 1/3
KTA1572
VCE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
-1 -1
IC/IB=10 Ta=25 C
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)
Ta=100 C
-10-1 -10-1
IC/IB=50
IC/IB=20
Ta=25 C
Ta=-55 C
-10-2 -10-2
-10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C h FE - I C
-10 600
IC/IB=10 VCE=-10V
BASE-EMITTER SATURATION
DC CURRENT GAIN h FE
VOLTAGE VBE(sat) (V)
Ta=100 C
400
-1 Ta=25 C
Ta=-55 C
Ta=25 C 200
Ta=-55 C
Ta=100 C
-10-1 0
-10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C I C - VCE
-10 -2
IC/IB=20 Ta=25 C IB=40.5mA IB=45mA
COLLECTOR CURRENT IC (A)
Ta=25 C
BASE-EMITTER SATURATION
IB=36mA
-1.6
VOLTAGE VBE(sat) (V)
IB=31.5mA
IB=27mA
-1.2
IB=9mA
-1
-0.8 IB=4.5mA
IB=13.5mA
IB=18mA
-0.4
IB=22.5mA
-10-1 0
-10-1 -1 -10 -102 -103 -104 0 -1 -2 -3 -4 -5
COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)
2010. 6. 4 Revision No : 0 2/3
KTA1572
SAFE OPERATING AREA
-10000
COLLECTOR CURRENT I C (mA)
IC MAX(PULSE)*
IC MAX(CONTINUOUS) 100mS* 10mS* 1mS*
-1000
DC OPERATION(Ta=25 C)
-100
-10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1 -1 -10 -100 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2010. 6. 4 Revision No : 0 3/3