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Supertex inc. TN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor
High input impedance utilizes a vertical DMOS structure and Supertex's well-proven,
Low input capacitance silicon-gate manufacturing process. This combination produces a
Fast switching speeds device with the power handling capabilities of bipolar transistors
Low on-resistance and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
Free from secondary breakdown
structures, this device is free from thermal runaway and thermally-
Low input and output leakage
induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
Logic level interfaces