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BF1205C
Dual N-channel dual gate MOS-FET
Rev. 02 -- 15 August 2006 Product data sheet

1. Product profile

1.1 General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.

The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features
I Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross-modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio.

1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment.
Philips Semiconductors BF1205C
Dual N-channel dual gate MOS-FET

1.4 Quick reference data
Table 1. Quick reference data
Per MOS-FET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 6 V
ID drain current (DC) - - 30 mA
Ptot total power dissipation Tsp 107