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SEMICONDUCTOR KTC3502
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH-DEFINITION CRT DISPLAY A
VIDEO OUTPUT APPLICATION. B D
C
E
FEATURES
F
High Voltage : VCEO=200V.
High Transition Frequency : fT=150MHz(Typ.). G
Low Collector Output Capacitance : Cob=1.7pF(Typ.).
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX
M
H 1.0 MAX
Collector-Base Voltage VCBO 200 V J 1.9 MAX
O K _
0.75 + 0.15
N P
Collector-Emitter Voltage VCEO 200 V 1 2 3 L _
15.50 + 0.5
M _
2.3 + 0.1
Emitter-Base Voltage VEBO 5 V N _
0.65 + 0.15
1. EMITTER O 1.6
IC P 3.4 MAX
DC 100 2. COLLECTOR
3. BASE
Collector Current mA
Pulse Icp 200
Collector Power Ta=25 1.5
PC W TO-126
Dissipation Tc=25 5
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=150V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 200 - - V
DC Current Gain hFE VCE=5V, IC=10mA 70 - 240 -
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2mA - - 0.6 V
Base-Emittter Saturation Voltage VBE(sat) IC=20mA, IB=2mA - - 1.0 V
Transition Frequency fT VCE=30V, IC=10mA - 150 - MHz
Collector Output Capacitance Cob VCB=30V, IE=0, f=1MHz - 1.7 - pF
Reverse Transfer Capassification Cre VCB=30V, f=1MHz - 1.2 - pF
Note : hFE Classification O:70 140 , Y:120 240
2003. 7. 24 Revision No : 2 1/3
KTC3502
I C - V CE I C - VBE
20 120
160 COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
VCE =10V
140 100
16
120
80
12 100
80 60
C
C
8
C
60
Ta=25
Ta=75
40
Ta=-25
40
4 I B =20