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TIP31A/31C
TIP32A/32B/32C
COMPLEMENTARY SILICON POWER
TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES

APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT

3
2
DESCRIPTION 1
The TIP31A and TIP31C are silicon
epitaxial-base NPN transistors in Jedec TO-220 TO-220
plastic package, intented for use in medium
power linear and switching applications.
TIP32B is PNP power transistor.The
complementary PNP types for TIP31A and
TIP31C are TIP32A and TIP32C.
INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP31A TIP31C
PNP* TIP32A TIP32B TIP32C
V CBO Collector-Base Volta ge (I E = 0) 60 80 100 V
V CEO Collector-Emitte r Voltage (I B = 0) 60 80 100 V
VEBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 3 A
I CM Collector Peak Current 5 A
IB Base Current 1 A
P tot Total Dissipation at T case 25 o C 40 W
T amb 25 o C 2 W
o
T st g Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
* For PNP types voltage and current values are negative

September 1997 1/5
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C

THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 3.12 C/W
o
Rt hj-amb Thermal Resistance Junction-ambient Max 62.5 C/W

o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collecto r Cut-of f for TIP31A/32A
Current (I B = 0) VCE = 30 V 0. 3 mA
for TIP31C/32B/32C
VCE = 60 V 0. 3 mA
ICES Collecto r Cut-of f for TIP31A/32A VCE = 60 V 0. 2 mA
Current (VBE = 0) for TIP/32B VCE = 80 V 0. 2 mA
for TIP31C/32C VCE = 100 V 0. 2 mA
I EBO Emitter Cut-off Current VEB = 5 V 1 mA
(I C = 0)
V CEO(su s) Collecto r-Emitter I C = 30 mA
Sustaining Voltage for TIP31A/32A 60 V
(I B = 0) for TIP32B 80 V
for TIP31C/32C 100 V
V CE(sat ) Collecto r-Emitter IC = 3 A IB = 375 mA 1. 2 V
Saturation Voltage
VBE Base-Emitter Volta ge IC = 3 A VCE = 4 V 1. 8 V
hFE DC Current Gain IC = 1 A VCE = 4 V 25 50
IC = 3 A VCE = 4 V 10
h fe Small Signall Current I C = 0.5 A VCE = 10 V
Gain f = 1 KHz 20
I C = 0.5 A VCE = 10 V
f = 1 KHz 3
Pulsed : pulse duration = 300