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CZD1386
-5 A, -30 V
Elektronische Bauelemente PNP Epitaxial Silicon Transistor

DESCRIPTION
The CZD1386 is designed for low frequency applications.

FEATURES
Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A)
Excellent DC current gain characteristics

PACKAGE DIMENSIONS

REF. Millimeter REF. Millimeter
Min. Max. Min. Max.
A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.40 3.00 K 0 0.15
E 2.30 Ref. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20

ABSOLUTE MAXIMUM RATINGS at Ta = 25