Text preview for : kmb5d5np30q.pdf part of KEC kmb5d5np30q . Electronic Components Datasheets Active components Transistors KEC kmb5d5np30q.pdf
Back to : kmb5d5np30q.pdf | Home
SEMICONDUCTOR KMB5D5NP30Q
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
H
portable equipment and battery powered systems. T
D P G L
FEATURES
N-Channel A
: VDSS=30V, ID=5.5A. DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=40m (Max.) @ VGS=10V B1 _
3.90 + 0.3
: RDS(ON)=50m (Max.) @ VGS=4.5V 8 5 B2 _
6.00 + 0.4
D _
0.42 + 0.1
P-Channel B1 B2 G _
0.15 + 0.1
: VDSS=-30V, ID=-4.5A. H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
: RDS(ON)=55m (Max.) @ VGS=-10V P 1.27 Typ.
: RDS(ON)=85m (Max.) @ VGS=-4.5V T _
0.20 + 0.05
Super High Dense Cell Design.
Reliable and rugged.
FLP-8 (1)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS 20 20 V
DC ID * 5.5 -4.5
Drain Current A
Pulsed (Note1)
IDP 23 -18
Source-Drain Diode Current IS 1.7 -1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D1 D1 S2
S1 1 8 D1
G1 2 7 D1 G1
G1
S2 3 6 D2
G2 4 5 D2
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2007. 3. 22 Revision No : 1 1/7
KMB5D5NP30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V N-Ch 30 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V P-Ch -30 - -
VDS=24V, VGS=0V N-Ch - - 1
Drain Cut-off Current IDSS A
VDS=-24V, VGS=0V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 20V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 0.8 - 1.8
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -1.0 -1.5 -2.5
VGS=10V, ID=6A (Note 1) N-Ch - 28 40
VGS=-10V, ID=-4.9A (Note 1) P-Ch - 45 55
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=5.2A (Note 1) N-Ch - 40 50
VGS=4.5V, ID=-3.6A (Note 1) P-Ch - 75 85
VGS=10V, VDS=5V N-Ch 15 - -
ON State Drain Current ID(ON) A
VGS=-10V, VDS=-5V P-Ch -12 - -
VDS=10V, ID=6A (Note 1) N-Ch 6 - -
Forward Transconductance gfs S
VDS=-15V, ID=-4.9A (Note 1) P-Ch 4 - -
IS=1.7A, VGS=0V (Note 1) N-Ch - 0.77 1.2
Source-Drain Diode Forward Voltage VSD V
IS=-1.7A, VGS=0V (Note 1) P-Ch - -0.82 -1.2
Dynamic (Note 2)
N-Ch - 9.3 -
Total Gate Charge Qg N-Ch P-Ch - 15.6 -
: VDS=10V, ID=6A,
VGS=4.5V (Fig.1) N-Ch - 2.5 -
Gate-Source Charge Qgs nC
P-Ch P-Ch - 2.4 -
: VDS=-15V, ID=-4.9A,
VGS=-10V (Fig.3) N-Ch - 3.2 -
Gate-Drain Charge Qgd
P-Ch - 3.3 -
N-Ch - 15.6 -
Turn-on Delay time td(on)
N-Ch P-Ch - 13 -
: VDD=10V, ID=1A,
N-Ch - 9.7 -
Turn-on Rise time tr VGS=4.5V, RG=6
RL=10 (Fig.2) P-Ch - 4.7 -
P-Ch ns
N-Ch - 26.3 -
Turn-off Delay time td(off) : VDD=-15V, ID=-1A,
VGS=-10V, RL=15 , P-Ch - 47.1 -
RG=6 (Fig.4) N-Ch - 26.9 -
Turn-off Fall time tf
P-Ch - 17 -
N-Ch - 510 -
Input Capacitance Ciss
P-Ch - 393 -
N-Ch
: VDS=8V, VGS=0V, f=1.0MHz N-Ch - 155 -
Output Capacitance Coss pF
P-Ch P-Ch - 116 -
: VDS=-15V, VGS=0V, f=1.0MHz
N-Ch - 127 -
Reverse transfer Capacitance Crss
P-Ch - 45 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 2/7
KMB5D5NP30Q
N-Channel
ID - VDS ID - VGS
10 25
8 20
Drain Current ID (A)
Drain Current ID (A)
VGS=10,9,8,7,6,5,4,3V
6 15
4 10
125 C
25 C -55 C
2 5
VGS=1.5V
0 0
0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 3.0
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
IS - VSD
Vth - Tj
20
Ta = 25 C
Normalized Threshold Voltage Vth
1.6
Reverse Drain Current IS (A)
VDS = VGS
IDS = 250