Text preview for : mmbta92.pdf part of LGE mmbta92 . Electronic Components Datasheets Active components Transistors LGE mmbta92.pdf
Back to : mmbta92.pdf | Home
MMBTA92
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
High voltage transistor
MARKING:2D
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -300 V
VCEO Collector-Emitter Voltage -300 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -300 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
RJA Thermal Resistance, junction to Ambient 410 /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
hFE(1) VCE= -10V, IC= -1mA 60
DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200
hFE(3) VCE= -10V, IC=-30mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V
VCE=-20V, IC= -10mA
Transition frequency fT 50 MHz
f=30MHz
MMBTA92
SOT-23 Transistor(PNP)