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NTD5865NL
N- Channel Power MOSFET
-
60 V, 40 A, 16 m
Features
Low Gate Charge
Fast Switching
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High Current Capability
100% Avalanche Tested
These Devices are Pb-
-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX
16 m @ 10 V
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 60 V 40 A
19 m @ 4.5 V
Parameter Symbol Value Unit
Drain--to--Source Voltage VDSS 60 V
D
Gate--to--Source Voltage -- Continuous VGS 20 V
Gate--to--Source Voltage VGS 30 V
-- Non--Repetitive (tp < 10 ms)
Continuous Drain TC = 25C ID 40 A
Current (RJC) G
Steady TC = 100C 26
State
Power Dissipation TC = 25C PD 52 W
(RJC) S
N-
-CHANNEL MOSFET
Pulsed Drain Current tp = 10 ms IDM 137 A
Operating Junction and Storage Temperature TJ, Tstg -- 55 to C 4
150
4
Source Current (Body Diode) IS 40 A
Single Pulse Drain--to--Source (L = EAS 36 mJ 1 2
Avalanche Energy 0.1 mH) 3 1
IAS 27 A 2
DPAK 3
Lead Temperature for Soldering Purposes TL 260 C CASE 369AA IPAK
(1/8 from case for 10 s) CASE 369D
(Surface Mount)
Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 2 (Straight Lead)
Ratings are stress ratings only. Functional operation above the Recommended STYLE 2
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
THERMAL RESISTANCE MAXIMUM RATINGS & PIN ASSIGNMENT
4
Parameter Symbol Value Unit 4 Drain
Drain
Junction--to--Case (Drain) RJC 2.4 C/W
65NLG
YWW
Junction--to--Ambient -- Steady State (Note 1) RJA 42
65NLG
58
YWW
1. Surface--mounted on FR4 board using 1 in sq pad size
58
(Cu area = 1.127 in sq [2 oz] including traces.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y = Year
WW = Work Week
5865NL = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
June, 2010 - Rev. 1
- NTD5865NL/D
NTD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain--to--Source Breakdown Voltage V(BR)DSS/TJ 55 mV/C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25C 1.0 mA
VDS = 60 V TJ = 150C 100
Gate--to--Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.0 V
Negative Threshold Temperature VGS(TH)/TJ 5.6 mV/C
Coefficient
Drain--to--Source On Resistance RDS(on) VGS = 10 V, ID = 20 A 13 16 m
Drain--to--Source on Resistance RDS(on) VGS = 4.5 V, ID = 20 A 16 19 m
Forward Transconductance gFS VDS = 15 V, ID = 20 A 15 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance Ciss 1400 pF
VGS = 0 V, f = 1.0 MHz,
Output Capacitance Coss 137
VDS = 25 V
Reverse Transfer Capacitance Crss 95
Total Gate Charge QG(TOT) 29 nC
Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 48 V, 1.1
Gate--to--Source Charge QGS ID = 40 A 4
Gate--to--Drain Charge QGD 8
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, 15 nC
ID = 40 A
Gate Resistance RG 1.3
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time td(on) 8.4 ns
Rise Time tr VGS = 10 V, VDD = 48 V, 12.4
Turn--Off Delay Time td(off) ID = 40 A, RG = 2.5 26
Fall Time tf 4.4
DRAIN-
-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25C 0.95 1.2 V
IS = 40 A TJ = 125C 0.85
Reverse Recovery Time tRR 20 ns
Charge Time ta VGS = 0 V, dIs/dt = 100 A/ms, 13
Discharge Time tb IS = 40 A 7
Reverse Recovery Charge QRR 13 nC
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number Package Shipping
NTD5865NL--1G IPAK (Straight Lead) 75 Units / Rail
(Pb--Free)
NTD5865NLT4G DPAK 2500 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NTD5865NL
TYPICAL CHARACTERISTICS
80 80
VGS = 10 V 4V VDS 10 V
70 3.8 V TJ = 25C 70
4.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60 60
3.6 V
50 50
3.4 V
40 40
3.2 V
30 30 TJ = 25C
20 3V 20
10 2.8 V 10 TJ = 125C
TJ = --55C
2.6 V
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN--TO--SOURCE VOLTAGE (V) VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 1. On-
-Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN--TO--SOURCE RESISTANCE ()
RDS(on), DRAIN--TO--SOURCE RESISTANCE ()
0.030 0.018
ID = 40 A TJ = 25C
TJ = 25C VGS = 4.5 V
0.025 0.016
0.020 0.014
VGS = 10 V
0.015 0.012
0.010 0.010
2 3 4 5 6 7 8 9 10 5 10 15 20 25 30 35 40
VGS, GATE--TO--SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On-
-Resistance vs. Gate Voltage Figure 4. On-
-Resistance vs. Drain Current
RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED)
2.0 10000
ID = 40 A VGS = 0 V
1.8 VGS = 10 V
TJ = 150C
1.6
IDSS, LEAKAGE (mA)
1.4
1000
1.2 TJ = 125C
1.0
0.8
0.6 100
--50 --25 0 25 50 75 100 125 150 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 5. On-
-Resistance Variation with Figure 6. Drain- -Source Leakage Current
-to-
Temperature vs. Voltage
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NTD5865NL
TYPICAL CHARACTERISTICS
1800 10
VGS = 0 V QT
VGS, GATE--TO--SOURCE VOLTAGE (V)
1600
TJ = 25C
1400 Ciss 8
C, CAPACITANCE (pF)
1200
6
1000
800
4 Qgs
Qgd
600
400 2 VDS = 48 V
200 Coss ID = 40 A
Crss TJ = 25C
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
VDS, DRAIN--TO--SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate- -Source vs. Total Charge
-to-
1000 40
VDD = 48 V VGS = 0 V
35
ID = 40 A TJ = 25C
IS, SOURCE CURRENT (A)
VGS = 10 V 30
100
25
t, TIME (ns)
td(off) 20
tr td(on) 15
10
tf 10
5
1 0
1 10 100 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
RG, GATE RESISTANCE () VSD, SOURCE--TO--DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 40
VGS = 10 V ID = 27 A
SINGLE PULSE 35
AVALANCHE ENERGY (mJ)
TC = 25C 100 ms
ID, DRAIN CURRENT (A)
100 30
10 ms 1 ms 10 ms
25
10 20
dc 15
1 10
RDS(on) LIMIT
THERMAL LIMIT 5
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN--TO--SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
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NTD5865NL
TYPICAL CHARACTERISTICS
10
RJC(t) (C/W) EFFECTIVE TRANSIENT
Duty Cycle = 0.5
THERMAL RESISTANCE
1
0.2
0.1
0.05
0.02
0.1
0.01
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 13. Thermal Response
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NTD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE A
NOTES:
- -
-T- SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.025 0.035 0.63 0.89
A E 0.018 0.024 0.46 0.61
S H F 0.030 0.045 0.77 1.14
1 2 3 H 0.386 0.410 9.80 10.40
U J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
F J U 0.020 ------ 0.51 ------
L V 0.035 0.050 0.89 1.27
Z 0.155 ------ 3.93 ------
D 2 PL STYLE 2:
PIN 1. GATE
0.13 (0.005) M T 2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20 3.0
0.244 0.118
2.58
0.101
5.80 1.6 6.172
0.228 0.063 0.243
SCALE 3:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD5865NL
PACKAGE DIMENSIONS
IPAK
CASE 369D--01
ISSUE B
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
- -
-T- F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 ------ 3.93 ------
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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