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2SD2413
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
2
4.6
B
3 3. EMITTER 1.6
4.4
1.8
1.4 1.4
Features 2.6 4.25
2.4 3.75
High collector to base voltage VCBO 0.8
MIN
High collector to emitter voltage VCEO 0.53
0.44 0.48 0.40
2x)
Large collector power dissipation PC 0.37
0.13 B 0.35
1.5
Low collector to emitter saturation voltage VCE(sat) 3.0
Dimensions in inches and (millimeters)
Marking:1S
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.5mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=400V, IE=0 50 A
Emitter cut-off current IEBO VEB=5V, IC=0 50 A
DC current gain hFE VCE=5V, IC=30mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 1.5 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.5 V
Transition frequency fT VCE=30V, IC=20mA, f=200MHz 40 MHz
Collector output capacitance Cob VCB = 30V, IE=0, f=1MHz 7 pF
2SD2413
SOT-89 Transistor(NPN)
Typical Characteristics