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MJD32CT4-A
Low voltage PNP power transistor
Features
This device is qualified for automotive
application TAB
Surface-mounting TO-252 power package in
tape and reel
3
Complementary to the NPN type MJD31C
1
Application DPAK
General purpose linear and switching TO-252
equipment
Description Figure 1. Internal schematic diagram
The device is manufactured in planar technology
with "base island" layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Table 1. Device summary
Order code Marking Package Packaging
MJD32CT4-A MJD32C DPAK Tape and reel
January 2010 Doc ID 13576 Rev 3 1/9
www.st.com 9
Electrical ratings MJD32CT4-A
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -100 V
VCEO Collector-emitter voltage (IB = 0) -100 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -3 A
ICM Collector peak current -5 A
IB Base current -1 A
PTOT Total dissipation at Tc = 25