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BUL67
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH RUGGEDNESS
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERISED AT 125oC
3
APPLICATIONS 2
1
s ELECTRONICS TRANFORMER FOR
HALOGEN LAMPS
s SWITCH MODE POWER SUPPLIES TO-220

DESCRIPTION
The BUL67 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM
The BUL series is designed for use in lighting
applications and in low cost switch-mode power
supplies.

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 10 A
I CM Collector Peak Current (tp < 5 ms) 18 A
IB Base Current 3.5 A
I BM Base Peak Current (t p < 5 ms) 7 A
P t ot Total Dissipation at T c = 25 o C 100 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

September 1997 1/6
BUL67

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 1.25 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 700 V 100