stp5nb100(fp).pdf part of ST stp5nb100(fp) stp5nb100(fp).pdf, . Electronic Components Datasheets Active components Transistors ST stp5nb100(fp).pdf text manual preview

Text preview for : stp5nb100(fp).pdf part of ST stp5nb100(fp) . Electronic Components Datasheets Active components Transistors ST stp5nb100(fp).pdf

Back to : stp5nb100(fp).pdf | Home

STP5NB100
STP5NB100FP
N-CHANNEL 1000V - 2.4 - 5A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID

STP5NB100 1000 V < 2.7 5A
STP5NB100FP 1000 V < 2.7 5A
n TYPICAL RDS(on) = 2.4
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES 3 3
2 2
n GATE CHARGE MINIMIZED 1 1

TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOE WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NB100 STP5NB100FP
VDS Drain-source Voltage (VGS = 0) 1000 V
VDGR Drain-gate Voltage (RGS = 20 k) 1000 V
VGS Gate- source Voltage