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SS8550
Plastic-Encapsulate Transistors
PNP Silicon COLLECTOR
3
TO-92
2
BASE
1
1. EMITTER 2
1 3
2. BASE
EMITTER
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol SS8550 Unit
Collector-Emitter Voltage VCEO -25 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current IC -1.5 Adc
Total Device Dissipation TA=25 C PD 1.0 W
Junction Temperature Tj 150 C
Storage Temperature Tstg -55 to +150 C
DEVICE MARKING
SS8550=SS8550D
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc
Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) ICBO - -0.1 uAdc
Emitter Cutoff Current(VEB = -5 Vdc, I C =0 Vdc) I EBO - -0.1 uAdc
1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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SS8550
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain -
hFE(1) 85 400 -
(IC= -100 mAdc, VCE=-1.0 Vdc)
DC Current Gain hFE(2) 40 - - -
(IC= -800 mAdc, VCE= -1.0 Vdc)
Collector-Emitter Saturation Voltage VCE(sat) - - -0.5 Vdc
(IC= -800 mAdc, IB= -80 mAdc)
Base-Emitter Saturation Voltage
VBE(sat) - - -1.2 Vdc
(IC= -800 mAdc, IB= -80 mAdc)
Transition Frequency 100
fT - - MHz
(VCE =-10V, I C =-50mA, f=30 MHz)
Classification of hFE(1)
Rank B C D E
Range 85-160 120-200 160-300 300-400
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SS8550
-0.5 1000
VCE = -1V
IB=-4.0mA
IC[mA], COLLECTOR CURRENT
-0.4 IB=-3.5mA
hFE, DC CURRENT GAIN
IB=-3.0mA 100
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
10
IB=-1.0mA
-0.1
IB=-0.5mA
1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
FIG.1 Static Characteristic FIG.2 DC Current Gain
-100
-10000
VCE = -1V
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC=10IB
IC[mA], COLLECTOR CURRENT
-10
-1000
VBE(sat)
-1
-100
VCE(sat)
-0.1
-10 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1 -1 -10 -100 -1000
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
FIG.3 Base-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE
10 100
1 10
-1 -10 -100 -1000 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
FIG.5 Collector Output Capacitance FIG.6 Current Gain Bandwidth Product
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SS8550
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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