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MMBT4401


TRANSISTOR(NPN)

SOT-23
FEATURES
Switching transistor
1. BASE
MARKING: MMBT4401=2X 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Power dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55to +150
RJA Thermal Resistance, junction to Ambient 357 /mW



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V

Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V

Collector cut-off current ICBO VCB=50 V, IE=0 0.1 A

Collector cut-off current ICEO VCE=30 V, IB=0 0.1 A

Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A

DC current gain hFE VCE=1V, IC=150mA 100 300

Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V

Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V

VCE= 10V, IC= 20mA
Transition frequency fT 250 MHz
f = 100MHz


1




JinYu www.htsemi.com
semiconductor

Date:201/5
MMBT4401




2




JinYu www.htsemi.com
semiconductor

Date:201/5