cet6861.pdf part of CET cet6861 cet6861.pdf, . Electronic Components Datasheets Active components Transistors CET cet6861.pdf text manual preview

Text preview for : cet6861.pdf part of CET cet6861 . Electronic Components Datasheets Active components Transistors CET cet6861.pdf

Back to : cet6861.pdf | Home

CET6861
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -3.5A, RDS(ON) = 130m @VGS = -10V.
RDS(ON) = 170m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead free product is acquired.

SOT-223 package.

G
D S
D
G
SOT-223
S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS