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IXKC 23N60C5


CoolMOSTM 1) Power MOSFET ID25 = 23 A
VDSS = 600 V
RDS(on) max = 0.1
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
D ISOPLUS220TM

Ultra low gate charge
G G
D
S isolated back
S surface
Preliminary data E72873




MOSFET Features

Symbol Conditions Maximum Ratings