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KSA1182
TRANSISTOR (PNP) SOT-23
FEATURES
Complement to KSC2859
1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER
3. COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 150 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-100mA 70 240
DC current gain
hFE(2) VCE=-6V, IC=-400mA 25
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA -1.0 V
Transition frequency fT VCE=-6V, IC=-20mA 200 MHz
Collector output capacitance Cob VCB=-6V, IE=0, f=1MHz 13 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
Marking F1O F1Y
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
KSA1182
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05