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GT30J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT
Unit: mm
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS
FRD included between emitter and collector
Enhancement mode type
High speed : tf = 0.25s (Typ.) (IC = 50A)
Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25