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CZT32C
SOT-223 Transistor(PNP)
1. BASE SOT-223
2. COLLECTOR
1 3. EMITTER



Features
Complementary to CZT31C
Power amplifier applications up to 3.0 amps.




Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1m A,IE=0 -100 V

Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V

Emitter-base breakdown voltage V(BR)EBO IE=-3mA,IC=0 -5 V

Collector cut-off current ICBO VCB=-100V,IE=0 -200 uA

Base cut-off current ICEO VCE=-60V,IB=0 -300 uA

Emitter cut-off current IEBO VEB=-5V,IC=0 -1 mA

hFE(1)* VCE=-4V,IC=-1A 25
DC current gain
hFE(2) * VCE=-4V,IC=-3A 10 100

Collector-emitter saturation voltage VCE(sat) * IC=-3.0A,IB=-375mA -1.2 V

Base-emitter voltage VBE(on) * VCE=-4V,IC=-3A -1.8 V

Transition frequency fT VCE=-10V,IC=-500mA,f=1MHz 3 MHz

* Pulsed , 2%D.C.
CZT32C
SOT-223 Transistor(PNP)



Typical Characteristics