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CEH2331
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
-20V, -5.2A , RDS(ON) = 48m @VGS = -4.5V.
RDS(ON) = 60m @VGS = -2.5V.
RDS(ON) = 78m @VGS = -1.8V.
High dense cell design for extremely low RDS(ON).
D(1,2,5,6,)
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6 G(3)
3
2
1
TSOP-6 S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS