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BC847S
NPN Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
o
.055(1.40) 8
.047(1.20) 0
o
.026TYP
(0.65TYP)
.021REF
* Features (0.525)REF
.096(2.45) .053(1.35)
Power dissipation .085(2.15) .045(1.15)
PCM : 0.3 W (Tamp.= 25 C)
O
Collector current .018(0.46)
.010(0.26)
ICM : 0.2 A .014(0.35) .006(0.15)
.006(0.15) .003(0.08)
Collector-base voltage
.087(2.20)
V(BR)CBO : 50 V .079(2.00) .004(0.10)
.000(0.00)
Operating & Storage junction Temperature
O O
.043(1.10) .039(1.00)
Tj, Tstg : -55 C~ +150 C
C1 B2 E2 .035(0.90) .035(0.90)
E1
Dimensions in inches and (millimeters)
B1 C2
O
Electrical Characteristics( Tamb=25 C unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=10