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CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V.
RDS(ON) = 34m @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
D 1 8 D
Lead free product is acquired.
S1 2 7 S2
TSSOP-8 Package.
S1 3 6 S2
G1 4 5 G2
G2
S2
S2
D G1
S1
S1
D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS