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MJD2955(PNP)
TO-251/TO-252-2L Transistor

1.BASE TO-251
2.COLLECTOR

3.EMITTER

1 2 3

Features
Designed for general purpose amplifier and low speed
Switching applications .
Electrically simiar to MJD3055.
DC current gain specified to10 Amperes TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -70 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -10 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -70 V

Collector-emitter breakdown voltage V(BR)CEO IC=-200 mA,IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V

ICBO VCB=-70V,IE=0 -0.02 mA
Collector cut-off current
ICEO VCB=-30V,IB=0 -50