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Si4814DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Integrated Schottky
0.021 @ VGS = 10 V 7.0 D Alternative Pinning for Additional Layout
Channel-1
Channel 1 Options
0.0325 @ VGS = 4.5 V 5.6
30 D 100% Rg Tested
0.020 @ VGS = 10 V 7.4
Channel-2
Channel 2
0.0265 @ VGS = 4.5 V 6.4 APPLICATIONS
D DC/DC Converters
- Notebook
SCHOTTKY PRODUCT SUMMARY
D1
VSD (V)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
SO-8
G1
D1 1 8 G1
N-Channel 1
D1 S1/D2 MOSFET S1/D2
2 7
G2 3 6 S1/D2
S2 4 5 S1/D2 Schottky Diode
G2
Top View N-Channel 2
MOSFET
Ordering Information: Si4814DY S2
Si4814DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 Channel-2
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS 20
TA = 25_C 7.0 5.5 7.4 5.7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 5.6 4.3 6 4.5
A
Pulsed Drain Current IDM 40 40
Continuous Source Current (Diode Conduction)a IS 1.7 1.0 1.8 0.95
TA = 25_C 1.9 1.1 2.0 1.16
Maximum Power Dissipationa PD W
TA = 70_C 1.2 0.71 1.3 0.74
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Channel-1 Channel-2
Parameter Symbol Typ Max Typ Max Unit
t v 10 sec 52 65 47 60
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady-State 90 112 85 107 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 38 28 35
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 1
Si4814DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Ch-1 0.8
Gate Threshold Voltage VGS( h)
GS(th) VDS = VGS, ID = 250 mA V
Ch-2 0.8
Ch-1 100
Gate-Body
Gate Body Leakage IGSS VDS = 0 V, VGS = 20 V
V nA
Ch-2 100
Ch-1 1
VDS = 30 V, VGS = 0 V
V
Ch-2 100
Zero Gate Voltage Drain Current IDSS mA
Ch-1 15
VDS = 30 V, VGS = 0 V TJ = 85_C
V V,
Ch-2 2000
Ch-1 20
On State Drain Currentb
On-State ID( )
D(on) VDS = 5 V, VGS = 10 V
V A
Ch-2 20
VGS = 10 V, ID = 7.0 A Ch-1 0.0175 0.021
VGS = 10 V, ID = 7.4 A Ch-2 0.0165 0.020
Drain Source On State Resistanceb
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 5.6 A Ch-1 0.027 0.0325
VGS = 4.5 V, ID = 6.4 A Ch-2 0.022 0.0265
VDS = 15 V, ID = 7.0 A Ch-1 17
Forward Transconductanceb gf
fs S
VDS = 15 V, ID = 7.4 A Ch-2 20
IS = 1.7 A, VGS = 0 V Ch-1 0.7 1.1
Diode Forward Voltageb VSD V
IS = 1 A, VGS = 0 V Ch-2 0.47 0.5
Dynamica
Ch-1 6.5 10
Total Gate Charge Qg
Channel-1 Ch-2 9.7 15
VDS = 15 V, VGS = 5 V, ID = 7.0 A Ch-1 1.5
Gate-Source
Gate Source Charge Qgs nC
Channel 2
Channel-2 Ch-2 2.6
VDS = 15 V, VGS = 5 V ID = -7.4 A
1 V V, Ch-1 2.7
Gate-Drain
Gate Drain Charge Qgd
d
Ch-2 3.8
Ch-1 0.5 1.6 2.6
Gate Resistance Rg W
Ch-2 0.5 1.8 3.1
Ch-1 12 20
Turn-On
Turn On Delay Time td( )
d(on)
Ch-2 13 20
Channel-1
Channel 1
VDD = 15 V, RL = 15 W Ch-1 13 20
Rise Time tr
ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 13 20
Channel 2
Channel-2 Ch-1 22 35
Turn-Off
Turn Off Delay Time td( ff)
d(off) VDD = 1 V RL = 1 W
15 V, 15 ns
Ch-2 29 45
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Ch-1 8 15
Fall Time tf
Ch-2 12 20
IF = 1.3 A, di/dt = 100 A/ms Ch-1 50 80
Source-Drain
Source Drain Reverse Recovery Time trr
IF = 2.2 A, di/dt = 100 mA/ms Ch-2 46 80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF V
IF = 1.0 A, TJ = 125_C 0.36 0.42
Vr = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100_C 0.7 10 mA
Vr = -30 V, TJ = 125_C 3.0 20
Junction Capacitance CT Vr = 10 V 50 pF
www.vishay.com Document Number: 71685
2 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 5 V
32 32
4V
I D - Drain Current (A)
I D - Drain Current (A)
24 24
16 16
3V TC = 125_C
8 8
25_C
-55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 750
Ciss
0.04 600
DS(on) - On-Resistance ( W )
C - Capacitance (pF)
VGS = 4.5 V
0.03 450
VGS = 10 V
0.02 300 Coss
Crss
0.01 150
r
0.00 0
0 8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7 A ID = 7 A
1.6
r DS(on) - On-Resistance (W)
4
(Normalized)
1.4
3
1.2
2
1.0
1
0.8
0 0.6
0.0 1.5 3.0 4.5 6.0 7.5 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 3
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
0.08
DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.06
TJ = 25_C 0.04
ID = 7 A
0.02
r
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
120
0.4
100
0.2 ID = 250 mA
V GS(th) Variance (V)
80
Power (W)
-0.0
60
-0.2
40
-0.4
20
-0.6
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
rDS(on) Limited IDM Limited
10
I D - Drain Current (A)
1 ms
1 ID(on) 10 ms
Limited
100 ms
TC = 25_C 1s
0.1 Single Pulse
10 s
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
www.vishay.com Document Number: 71685
4 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 5
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 4 V
32 32
I D - Drain Current (A)
I D - Drain Current (A)
24 24
16 3V 16
TC = 125_C
8 8
25_C
-55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 1500
0.04 1200
r DS(on) - On-Resistance ( W )
C - Capacitance (pF)
Ciss
0.03 900
VGS = 4.5 V
0.02 600 Coss
VGS = 10 V
0.01 300 Crss
0.00 0
0 8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7.4 A 1.6 ID = 7.4 A
4
r DS(on) - On-Resistance (W)
1.4
(Normalized)
3
1.2
2
1.0
1
0.8
0 0.6
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
www.vishay.com Document Number: 71685
6 S-32124--Rev. E, 27-Oct-03
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
0.08
DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.06
TJ = 25_C 0.04
ID = 7.4 A
0.02
r
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient
10 120
1 100
I R - Reverse Current (mA)
1-1 80
Power (W)
1-2 60
30 V
24 V
1-3 40
1-4 20
1-5 0
0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
rDS(on) Limited IDM Limited
10
I D - Drain Current (A)
1 ms
1 ID(on) 10 ms
Limited
100 ms
TC = 25_C 1s
0.1 Single Pulse 10 s
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Document Number: 71685 www.vishay.com
S-32124--Rev. E, 27-Oct-03 7
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
0.1 PDM
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 85_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71685
8 S-32124--Rev. E, 27-Oct-03
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1