Text preview for : 2sd999.pdf part of HT Semiconductor 2sd999 . Electronic Components Datasheets Active components Transistors HT Semiconductor 2sd999.pdf



Back to : 2sd999.pdf | Home

2SD999

TRANSISTOR (NPN) SOT-89-3L

FEATURES
Low Collector-Emitter Saturation Voltage 1. BASE
Mini Power Type Package
Excellent DC Current Gain Linearity 2. COLLECTOR

3. EMITTER



MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100