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2SA1 1 7 9
TRANSISTOR(PNP)
SOT-23
FEATURES
. High breakdown voltage
1. BASE
2. EMITTER
MARKING: M
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -55 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
Pc Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 uA
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 uA
DC current gain hFE VCE=-6V,IC=-1mA 200 400
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V
Transition frequency fT VCE=-6V,IC=-10mA 180 MHz
Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF
JinYu www.htsemi.com
semiconductor
2SA1 1 7 9
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05