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A94
TRANSISTOR (PNP)
FEATURES
SOT-89-3L
High voltage
MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1
2
Symbol Parameter Value Units 3
VCBO Collector-Base Voltage -400 V 1. BASE
2. COLLECTOR
VCEO Collector-Emitter Voltage -400 V
3. EMITTER
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.5 W
Tj Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR) CBO IC= -100A, IE=0 -400 V
Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V
Emitter-base breakdown voltage V(BR) EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-400V, IB=0 -5 A
Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 A
hFE(1) VCE=-10V, IC=-10mA 80 300
hFE(2) VCE=-10V, IC=-1mA 70
DC current gain
hFE(3) VCE=-10V, IC=-100mA 60
hFE(4) VCE=-10V, IC=-50mA 80
VCE (sat) IC=-10mA, IB=-1mA -0.2 V
Collector-emitter saturation voltage
VCE (sat) IC=-50mA, IB=-5mA -0.3 V
Base-emitter saturation voltage VBE (sat) IC=-10mA, IB= -1mA -0.75 V
VCE=-20V, IC=-10mA
Transition frequency fT 50 MHz
f =30MHz
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semiconductor
Typical Characteristics A94
Static Characteristic hFE ---- IC
-14 500
COMMON COMMON EMITTER
-100uA EMITTER VCE= -10V
-12 Ta=25 300
COLLECTOR CURRENT IC (mA)
-90uA Ta=100
DC CURRENT GAIN hFE
-10 -80uA
-70uA Ta=25
100
-8
-60uA
-6 -50uA
-40uA
-4 30
-30uA
-20uA
-2
IB=-10uA
-0 10
-0 -4 -8 -12 -16 -20 -1 -3 -10 -30 -100 -200
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCEsat ---- IC VBEsat ---- IC
-10 -1000
Ta=25
COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION
-3
VOLTAGE VBEsat (mV)
VOLTAGE VCEsat (V)
Ta=100
-1
-0.3 -300
Ta=100
-0.1
Ta=25
-0.03
=10 =10
-0.01 -100
-1 -3 -10 -30 -100 -200 -1 -3 -10 -30 -100 -200
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC ---- VBE fT ---- IC
-200 100
-100
TRANSITION FREQUENCY fT (MHz)
COLLECTOR CURRENT IC (mA)
-30
00
5
T =1
T =2
30
a
a
-10
-3
COMMON EMITTER
COMMON EMITTER VCE= -20V
VCE=-10V Ta=25
-1 10
-200 -400 -600 -800 -1000 -3 -10 -30 -100
BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA)
Cob/Cib ---- VCB/VEB PC ---- Ta
600
300
f=1MHz
IE=0/IC=0
Cib 500
Ta=25
COLLECTOR POWER DISSIPATION
100
(pF)
400
30 Cob
CAPACITANCE C
PC (mW)
300
10
200
3 100
0
1
-20 0 25 50 75 100 125 150
-0.1 -0.3 -1 -3 -10
REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta ( )
JinYu www.htsemi.com
semiconductor