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2SD1005

TRANSISTOR (NPN)
SOT-89-3L
FEATURES
Small Flat Package
High Breakdown Voltage 1. BASE

Excellent DC Current Gain Linearity
2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 0.1