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TDA7560
4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD
SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4 MAX. 4 x 45W/4 EIAJ 4 x 30W/4 @ 14.4V, 1KHz, 10% 4 x 80W/2 MAX. 4 x 77W/2 EIAJ 4 x 55W/2 @ 14.4V, 1KHz, 10% EXCELLENT 2 DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: INTERNALLY FIXED GAIN (26dB) NO EXTERNAL COMPENSATION NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER OUTPUT DC OFFSET DETECTION BLOCK AND APPLICATION DIAGRAM
Vcc1 Vcc2 470µF ST-BY 100nF
MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE
FLEXIWATT25
ORDERING NUMBER: TDA7560
LOAD DUMP VOLTAGE FORTUITOUS OPEN GND REVERSED BATTERY ESD DESCRIPTION The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.
MUTE
HSD
HSD/VOFFDET OUT1+ OUT1-
IN1 0.1µF
PW-GND OUT2+
IN2 0.1µF
OUT2PW-GND OUT3+
IN3 0.1µF
OUT3PW-GND OUT4+
IN4 0.1µF AC-GND 0.47µF SVR 47µF TAB S-GND
OUT4PW-GND
D94AU158C
December 2001
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ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCC (DC) VCC (pk) IO Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (t = 50ms) Output Peak Current: Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs) Power dissipation, (Tcase = 70°C) Junction Temperature Storage Temperature Parameter Value 18 28 50 9 10 80 150 55 to 150 Unit V V V A A W °C °C
Ptot Tj Tstg
PIN CONNECTION (Top view)
1
25
P-GND1
OUT1+
IN1
IN2
IN4
IN3
OUT3+
AC-GND
P-GND3
OUT1-
SVR
S-GND
P-GND2
OUT2-
OUT2+
OUT3-
ST-BY
OUT4+
P-GND4
MUTE
OUT4-
D94AU159A
THERMAL DATA
Symbol Rth j-case Parameter Thermal Resistance Junction to Case Max. Value 1 Unit °C/W
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HSD
TAB
VCC
VCC
TDA7560
ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25°C; Refer to the test and application diagram, unless otherwise specified.)
Symbol Iq1 VOS dVOS Gv dGv Po Parameter Quiescent Current Output Offset Voltage During mute ON/OFF output offset voltage Voltage Gain Channel Gain Unbalance Output Power Test Condition RL = Play Mode Min. 120 Typ. 200 Max. 320 ±60 ±60 27 ±1 Unit mA mV mV dB dB W W W W W W W W W W W W % % µV µV dB KHz K dB dB µA µA V V dB V V V 8 18 18 0.25 400 Vstby = 5V Vstby = 5V; Vmute = 8V Vstby = 5V; Vmute = 8V VOFF > ±4V Vstby = 5V; Vmute = 8V VOFF > ±2V 8 ±2 0 12 ±3 6 ±4 1.5 0.6 800 V µA µA V mA V V V V V
25 VS = 13.2V; THD = 10% VS = 13.2V; THD = 1% VS = 14.4V; THD = 10% VS = 14.4V; THD = 1% VS = 13.2V; THD = 10%, 2 VS = 13.2V; THD = 1%, 2 VS = 14.4V; THD = 10%, 2 VS = 14.4V; THD = 1%, 2 VS = 13.7V; RL = 4 VS = 13.7V; RL = 2 VS = 14.4V; RL = 4 VS = 14.4V; RL = 2 Po = 4W Po = 15W; RL = 2 "A" Weighted Bw = 20Hz to 20KHz f = 100Hz; Vr = 1Vrms PO = 0.5W f = 1KHz PO = 4W f = 10KHz PO = 4W VSt-By = 1.5V VSt-By = 1.5V to 3.5V (Amp: ON) (Amp: OFF) POref = 4W (Amp: Play) (Amp: Mute) (Amp: Mute) Att 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W VMUTE = 1.5V (Sourced Current) VMUTE = 3.5V IO = 0.35A; VS = 9 to 16V 23 16 28 20 42 32 50 40 41
26 25 19 30 23 45 34 55 43 45 77 50 80 0.006 0.015 35 50 70 300 100 70 60
Po EIAJ Po max. THD eNo SVR fch Ri CT ISB Ipin4 VSB out VSB in AM VM out VM in VAM in
EIAJ Output Power (*) Max. Output Power (*) Distortion Output Noise Supply Voltage Rejection High Cut-Off Frequency Input Impedance Cross Talk St-By Current Consumption St-by pin Current St-By Out Threshold Voltage St-By in Threshold Voltage Mute Attenuation Mute Out Threshold Voltage Mute In Threshold Voltage VS Automute Threshold
0.05 0.07 50 70
50 100 80 60
120 75 ±10 1.5
3.5 80 3.5 90 1.5 6.5 7 7.5 12
Ipin22
Muting Pin Current
7 -5
HSD SECTION Vdropout Dropout Voltage Current Limits Iprot OFFSET DETECTOR SECTION VM_ON Mute Voltage for DC offset detection enabled VM_OFF VOFF V25_T V25_F Detected Differential Output Offset Pin 25 Voltage for Detection = TRUE Pin 25 Voltage for Detection = FALSE
(*) Saturated square wave output.
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TDA7560
Figure 1: Standard Test and Application Circuit
C8 0.1µF
C7 2200µF Vcc1-2 Vcc3-4 6 20 9 8 OUT1
R1 ST-BY 10K R2 MUTE 47K C1 IN1 0.1µF IN2 C2 0.1µF IN3 C3 0.1µF IN4 C4 0.1µF S-GND 14 13 16 C5 0.47µF SVR C6 47µF 10 15 12 11 C10 1µF C9 1µF 22 4
7
5 2 3 OUT2
17 18 19 OUT3
21 24 23 25 HSD 1 TAB
D95AU335B
OUT4
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Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) COMPONENTS & TOP COPPER LAYER
BOTTOM COPPER LAYER
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Figure 3. Quiescent current vs. supply voltage.
240 220 200 180 160 140 Id (mA)
Vi = 0 RL = 4 Ohm
Figure 4. Output power vs. supply voltage.
80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 Po (W)
Po-max
RL= 4 Ohm f= 1 KHz
THD= 10 %
THD= 1 %
8
10
12 Vs (V)
14
16
18
8
9
10
11
12
13 14 Vs (V)
15
16
17
18
Figure 5. Output power vs. supply voltage. Po (W) 130 120 Po-max 110 100 RL= 2 Ohm 90 THD= 10 % f= 1 KHz 80 70 60 50 THD= 1 % 40 30 20 10 8 9 10 11 12 13 14 15 16 17 18 Vs (V) Figure 7. Distortion vs. output power
THD (%)
Vs= 14.4 V
Figure 6. Distortion vs. output Power
THD (%) 10
Vs= 14.4 V RL = 4 Ohm f = 10 KHz
1
0.1
0.01
f = 1 KHz
0.001 0.1
1 Po (W)
10
Figure 8. Distortion vs. frequency.
10 THD (%)
10
1
RL = 2 Ohm f = 10 KHz
1
Vs = 14.4 V RL = 4 Ohm Po = 4 W
0.1
0.1
0.01
f = 1 KHz
0.01
0.001 0.1
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1
Po (W)
10
0.001 10
100
f (Hz)
1000
10000
TDA7560
Figure 9. Distortion vs. frequency.
10 THD (%)
90 80
Figure 10. Crosstalk vs. frequency.
CROSST ALK (dB)
1
Vs = 14.4 V RL = 2 Ohm Po = 8 W
70 60 50
RL = 4 Ohm Po = 4 W Rg = 600 Ohm
0.1
40 30
0.01
0.001 10
100
f (Hz)
1000
10000
20
10
100
f (Hz)
1000
10000
Figure 11. Supply voltage rejection vs. frequency. SVR (dB) 100
90 80 70 60 50 40 30 20 10 100 f (Hz) 1000 10000
Rg= 600 Ohm
Figure 12. Output attenuation vs. supply voltage.
OUT ATTN (dB) 0 -20 -40 -60 -80 -100 5 6 7 Vs (V) 8 9 10
RL = 4 Ohm Po= 4 W ref.
Vripple= 1 Vrms
Figure 13. Output noise vs. source resistance.
En (uV) 130 120 110 100 90 80 70 60 50 40 30 20
Figure 14. Power dissipation & efficiency vs. output power (sine-wave operation)
Ptot (W) 90 80
n Vs= 13.2 V RL= 4 x 4 Ohm
n (%)
90 80 70 60 50 40
Vs= 14.4 V RL= 4 Ohm
70 60 50 40
22-22 KHz lin.
f= 1 KHz SINE
30 20 10 0
Ptot
30 20 10
"A" wgtd
1
10
100 1000 Rg (Ohm)
10000
100000
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Po (W)
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Figure 15. Power dissipation vs. ouput power (Music/Speech Simulation)
30 25 20 15 10 5 Ptot (W)
Vs= 13.2 V RL= 4 x 4 Ohm GAUSSIAN NOISE CLIP START
Figure 16. Power dissipation vs. output power (Music/Speech Simulation)
60 55 50 45 40 35 30 25 20 15 10 5 Ptot (W)
Vs= 13.2 V RL= 4 x 2 Ohm GAUSSIAN NOISE
CLIP START
0
1
2
3 Po (W)
4
5
6
0
2
4 Po (W)
6
8
10
DC OFFSET DETECTOR The TDA7560 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin. APPLICATION HINTS (ref. to the circuit of fig. 1) SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10µF. INPUT STAGE The TDA7560's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz.
STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm equivalent resistance should present between the power supply and the muting and stand-by pins. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from fig. 15, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussiandistributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70°C and TCHIP = 150°C as boundary conditions, the heatsink's thermal resistance should be approximately 2°C/W. This would avoid any thermal shutdown occurence even after longterm and full-volume operation.
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DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3 MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90 mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 MAX. 4.65 2.00 1.05 0.42 0.57 1.20 24.25 29.30 MIN. 0.175 0.070 0.029 0.014 0.031 0.935 1.138 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019 MAX. 0.183 0.079 0.041 0.016 0.022 0.047 0.955 1.153
OUTLINE AND MECHANICAL DATA
22.07 18.57 15.50 7.70
22.87 19.37 15.90 7.95
0.869 0.731 0.610 0.303
0.904 0.762 0.626 0.313
3.70 3.60
4.30 4.40
0.145 0.142
0.169 0.173
5° (Typ.) 3° (Typ.) 20° (Typ.) 45° (Typ.)
Flexiwatt25
(1): dam-bar protusion not included (2): molding protusion included
V3 H3
H H1 H2 R3 R4 V1 R2 R L L1 A
L4
O
L2
N
L3
V1
V2
R2 L5 G V B C V
FLEX25ME
R1 R1 R1 E
D
G1
F M M1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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