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FDN342P
August 1999

FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features
This P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized RDS(ON) = 0.13 @ VGS = -2.5 V.
for power management applications for a wide range
Rugged gate rating (