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PD - 90339F
IRF350
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6768
HEXFET TRANSISTORS JANTXV2N6768
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF350 400V 0.300 14A
The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. n Dynamic dv/dt Rating
n Hermetically Sealed
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements
amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25